SSF3055 general fea t ures v ds = 25v ,i d = 12a r ds (on) < 120m ? @ v gs =5 v r ds (on) < 90m ? @ v gs = 10v high p o w e r and curre nt ha ndi ng cap a b ilit y lea d free p r oduct is acq u ir ed surface mo unt packag e des cript ion t he ssf 3055 uses adv anc ed trench techn o l o g y to provi de e x ce ll e n t r ds (on) an d l o w gate ch arg e . t h is devic e is suita b le for use as a batter y pr ote c tion or in other s w itch in g app licati on. 3 2 1 s d g d g s markin g a nd p in a s si g nme n t sc he ma tic dia g ram t o -252 ( dp a k ) to p vi e w application batter y pr ote c tion loa d s w itch po w e r ma na geme n t pack age mar k in g and ord e ring i n formati o n de v i ce marking de v i c e d e v i ce pa ck age reel size ta pe w i dt h quantity 305 5 s s f 3 0 5 5 t o -252(dpak) - - - abs olute maxi mu m ratin gs(t a=25 unless otherw i s e noted) p a r a m e t e r s y m b o l l i m i t u n i t drain-s ourc e voltag e v ds 2 5 v gate-source voltage v gs 2 0 v i d 1 2 a drain c u rre nt-conti nuo us@ current-p ulse d (note 1) i dm 4 5 a maximum po w e r dissipation p d 4 8 w operatin g junc tion an d st orag e t e mperature rang e t j ,t st g -55 t o 150 ther mal cha ract eristics t hermal resist ance,ju nctio n -to-ambi ent (not e 2) r ja 7 5 / w electri c al cha ra cteristi c s (ta=25 unless otherw i se noted ) parameter s y mbol c o n d i t i o n min t y p m a x unit off ch a r a c teristics drain-s ourc e breakd o w n v o l t age bv ds s v gs =0 v i d = 250 a 2 5 v z e ro gate voltage dr ain c u rr ent i ds s v ds = 20v,v gs = 0 v 2 5 a gate-bod y l e a k age c u rrent i gss v gs = 20v,v ds =0 v 2 50 n a on ch a r a c t e ristics (no t e 3) gate t h reshol d voltag e v gs( t h) v ds =v gs ,i d = 2 5 0 a 0 . 8 1 . 2 2 . 5 v drain-s ourc e on-state resis t ance r ds (on) v gs =5 v, i d = 1 2 a 7 0 1 2 0 m ? v gs = 10v, i d = 1 2 a 5 0 9 0 m ? ? silikron semiconductor co.,l td. 2008.7.29 v e r s ion : 1.0 p a ge of 3 1
SSF3055 f o r w a r d t r anscond uctanc e g fs v ds = 15v,i d = 1 2 a 1 6 s dyn a m i c ch a r a c teristics (note4) input cap a cita nce c lss 4 5 0 pf output cap a cit ance c oss 2 0 0 pf revers e t r ansfer capac itanc e c rss v ds = 15v,v gs =0v, f = 1.0mhz 6 0 pf switching c h a r a c te ristics (note 4) t u rn-on delay t i me t d( on) 6 n s t u rn-on rise t i me t r 6 n s t u rn-off delay t i me t d( o f f ) 2 0 n s t u rn-off fall t i me t f v ds = 15v,i d = 12a v gs = 10v,r gen =2 .5 ? r l =1 ? 5 n s t o tal gate charge q g 1 5 n c gate-source c harg e q gs 2 . 0 n c gate-drain charge q gd v ds = 12.5v,i d =6 a,v gs = 10v 7 . 0 n c dr a i n-sour ce diode cha r a c t eristics diod e f o r w ar d voltage (n ote 3) v sd v gs =0 v,i s = 1 2 a 1 . 5 v diod e f o r w ar d current (note 2) i s 1 2 a r e vers e r e cover y time t rr 3 0 n s r e vers e r e cover y c h ar ge q rr i f = i s , dl f /dt = 100a / s 4 3 n c notes: 1. repetitiv e r a ting: puls e w i dth limite d b y maximum ju nct i on temp eratur e. 2. surface mou n ted on f r 4 b oard, t 10 sec. 3. pulse t e st: pulse w i dth 300 s, dut y c y cl e 2%. 4. guarante ed b y desi gn, not subj ect to prod uction testin g. typical electrical and t h ermal charact eristics v in v out 10 % 10 % 50 % 50 % puls e width inverted t d( on ) 90 % t r t on 90 % 10 % t of f t d ( off) t f 90 % v in v out 10 % 10 % 50 % 50 % puls e width inverted t d( on ) 90 % 90 % t r t on 90 % 10 % t of f t d ( off) t f 90 % vgs r gen vi n g vd d rl v out s d figure 2:s w itching w a v e forms figure 1: sw it ching t e st circuit ? silikron semiconductor co.,l td. 2008.7.29 v e r s ion : 1.0 p a ge of 3 2
SSF3055 t o -252 p ackage informa t ion notes 1. no curre nt jedec outline for t h is package. 2. l 3 and b 3 dim ensions establish a minimum m ounting surface for terminal 3. 3. dimension ( w ithout solder). 4. add t y picall y 0 . 002 inches (0.05 mm) for solder plating. 5. l 1 is the termi nal length for soldering. 6. position of lead to be measur e d 0.090 inc hes (2 .28mm) fr om bott o m of dimension d. 7. controlling dimension: inch. ? silikron semiconductor co.,l td. 2008.7.29 v e r s ion : 1.0 p a ge of 3 3
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